| 摘要 |
PROBLEM TO BE SOLVED: To provide narrow-pitch interconnections of a semiconductor device, and to provide a method of forming the same. SOLUTION: The semiconductor device includes first interconnections 13, which are formed on a substrate 11 and have a side face slanted, in such a manner as to be widened upwards from the substrate 11 side and second interconnections 15 which are separated from the first interconnections 13 by insulating films 14 and have a side face slanted, in such a manner as to widen toward the substrate 11 side from above. Thus, an interconnection pitch L1, which is half the mask pattern pitch can be obtained. COPYRIGHT: (C)2009,JPO&INPIT
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