| 摘要 |
FIELD: processes, etching. ^ SUBSTANCE: usage: for receiving structures by means of plasma etching process through the mask. Concept of the invention: etching method of layer above support through the mask provides cyclic process of gases modulation during more then three cycles. Each cycle contains stage of protective layer formation operation implementation with usage of the first gaseous reagent with initial gaseous reagent, duration of which is preliminary 0.0055-7 seconds for each cycle, and stage of etching operation implementation for etching of device feature through the mask for etching of the second gaseous reagent using reactive gaseous reagent - etchant, duration of which is preliminary 0.005-14 seconds for each cycle. Protective layer formation operation contains stage of initial gas feeding and stage of plasma formation from initial gas. Each etching operation contains stage of reactive gas - etchant feeding and stage of plasma formation from reactive gas - etchant. ^ EFFECT: providing of regulation ability of critical dimensions during etching. ^ 35 cl, 10 dwg |
