SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF, AND DISPLAY UNIT AND DRIVING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To manufacture efficiently a semiconductor device, when a plurality of TFTs are formed in an identical substrate as switching transistors and nonvolatile memory transistors. SOLUTION: A thin-film transistor 300 is formed in a dual gate structure in which a first gate electrode 311 and a second electrode 332 face each other through a channel formation region 321c of a semiconductor layer 321. Here, the semiconductor layer 321 is formed so that unevenness becomes larger in the plane of the side of a second insulating film than the plane of the side of a first insulating film. And, a second insulating film 331 is formed by laminating in sequence a second bottom insulating layer 331b, a charge storage layer 331m, and a second top insulating layer 331t so as to face the semiconductor layer 321. COPYRIGHT: (C)2009,JPO&INPIT