SOLID-STATE IMAGING DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging device which can be reduced in power consumption by making small a stray capacity around charge transfer electrodes and between the charge transfer electrodes. SOLUTION: The solid-state imaging device comprises: a charge transfer channel 2 formed in a semiconductor substrate; insulation film 3 which is formed on the surface of the semiconductor substrate, covering the charge transfer channel 2; a plurality of charge transfer electrodes 4a and 4b arranged on the charge transfer channel 2 with the insulation film 3 put between; interlayer insulation films 6 and 7 which cover the plurality of charge transfer electrodes; light shielding film 8 which covers the charge transfer channel 2 from above the interlayer insulation films 6 and 7; and air gap layer 5 formed between the plurality of charge transfer electrodes 4a and 4b and the interlayer insulation films 6 and 7. COPYRIGHT: (C)2009,JPO&INPIT