| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser element which can divide the multilayer semiconductor structure easily and can enhance emission efficiency. SOLUTION: In the method for manufacturing a semiconductor laser element, a plating electrode layer 5 formed such that the peripheral portion serves as eaves 7 is used as a mask when an underlying electrode layer 4 is etched. Consequently, the underlying electrode layer 4 is not etched at the eaves 7 of the plating electrode layer 5 but left as it is. Thereafter, cleavage is performed along a division line D set at a position overlapping the eaves 7 when viewed from the laminating direction so that the underlying electrode layer 4 extends with a substantially equal thickness up to the opposite end faces 1a and 1a of the semiconductor laser element 1 thus enhancing emission efficiency of the semiconductor laser element 1. When cleavage is performed along a division line D from the other side of a semiconductor substrate 2, the multilayer semiconductor structure 3 can be divided without making the cleavage interface reach the plating electrode layer 5. Consequently, the multilayer semiconductor structure 3 can be divided easily. COPYRIGHT: (C)2009,JPO&INPIT
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