| 发明名称 |
Silicon Compounds for Producing Sio2-Containing Insulating Layers on Chips |
| 摘要 |
The present invention relates to a process for producing an SiO<SUB>2</SUB>-containing insulating layer on chips and the use of specific precursors for this purpose. The invention further relates to an insulating layer obtainable in this way and also to chips which have been provided with such an insulating layer.
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| 申请公布号 |
US2008283972(A1) |
申请公布日期 |
2008.11.20 |
| 申请号 |
US20040586675 |
申请日期 |
2004.12.22 |
| 申请人 |
DEGUSSA AG |
发明人 |
MUH EKKEHARD;RAULEDER HARTWIG;KLEIN HARALD;MONKIEWICZ JAROSLAW;SAVVOPOULOS IORDANIS |
| 分类号 |
H01L23/58;C23C16/40;H01L21/31;H01L21/316 |
主分类号 |
H01L23/58 |
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