| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a deep hole reaching deep in a semiconductor substrate by usual semiconductor processes, and to provide a semiconductor device manufactured by the same. SOLUTION: The method of manufacturing the semiconductor device includes an element manufacturing process wherein a semiconductor element is formed on a semiconductor substrate 10 and an interlayer film formation process wherein a LOCOS oxide film 12 having an opening at a desired position is formed as a constituent component of the semiconductor device on the surface RS of the semiconductor substrate 10. It also includes a hole formation process wherein a hole 11a reaching deep in the semiconductor substrate 10 is formed from the surface RS of the semiconductor substrate 10 using the LOCOS oxide film 12 formed in the interlayer film formation process as an etching mask. COPYRIGHT: (C)2009,JPO&INPIT
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