| 摘要 |
FIELD: electricity. ^ SUBSTANCE: invention is attributed to electric engineering scope, specifically to microwave stripe technology and its manufacturing technique which can be used in radioelectronic industry, instrument engineering and computer engineering. Resistor with increased dissipation power contains dielectric base on which following elements are placed: film resistive layer, connected with it by their contact edges current-carrying and grounding contact areas, and dielectric thermally conductive layer contacting with resistive layer which is applied onto film resistive layer on the side opposite to dielectric base, with side-faces covered with resistive film. Contact edges of current-carrying and grounding areas are made Z-shaped, covering by their upper shelves the dielectric current-carrying layer edges, and their lower shelves are installed on contact edges of resistive film and on possible adhesive dielectric sublayer (e.g. made of silicium nitride Si3N4 with thickness of 1.0/1.5 micron) between film resistive layer with contact areas and dielectric base. Method for manufacturing of the resistor with increased dissipation power includes applying on dielectric base with possible adhesive dielectric thermally conductive sublayer the resistive layer and current-carrying contact areas via photolithography and electrochemical deposition metals techniques. After the resistive layer creation metal contact mask is applied on the latter, and in the formed windows the dielectric thermally conductive material of predefined thickness is deposited with covering the side-faces of resistive film. The pattern of dielectric thermally conductive layer on resistive film is obtained by "explosive" etching of contact mask. On the edges of dielectric thermally conductive layer and resistive film and on dielectric base adhesive sublayer surface current-carrying contact areas are applied via photolithography and electrochemical deposition of metals techniques with creation of coats on dielectric and thermally conductive layer edges. ^ EFFECT: increase of dissipation pulse power by 5/10 times and reliability of resistor operation. ^ 2 cl, 1 dwg |
