| 摘要 |
PROBLEM TO BE SOLVED: To provide a wet etching method of a gallium oxide single crystal, with which a technique of wet etching in a semiconductor manufacturing process is applicable to a gallium oxide single crystal. SOLUTION: In the wet etching method of a gallium oxide single crystal for etching a gallium oxide single crystal with an HF (hydrogen fluoride) solution, a gallium oxide single crystal is immersed in an HF solution of≥47% concentration and etched at a room temperature, thereby etching the gallium oxide single crystal in a depth direction at an etching speed of≥60 nm/h. COPYRIGHT: (C)2009,JPO&INPIT
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