发明名称 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
摘要 A single-crystal semiconductor layer is separated from a single-crystal semiconductor substrate and is fixed to an insulating substrate to form a TFT over the insulating substrate. Then, a driver circuit is formed using the TFT. The TFT has excellent current characteristics because an active layer is almost in a single-crystal state. Accordingly, a small thin display device with low power consumption can be manufactured. Further, a controller and a shift register which is included in a source driver are operated at the same power supply voltage. Thus, power consumption can be reduced.
申请公布号 US2008284710(A1) 申请公布日期 2008.11.20
申请号 US20080055055 申请日期 2008.03.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KIMURA HAJIME;UMEZAKI ATSUSHI
分类号 G09G3/36 主分类号 G09G3/36
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