| 摘要 |
An light-emitting diode (LED) device, comprising: a transparent substrate; a transparent thin-film transistor located over the substrate; a light-emitting element formed over the transparent thin-film transistor, wherein the light-emitting element comprises a first transparent extensive electrode formed at least partially over a portion of the transparent thin-film transistor, a layer of light-emitting material, and a second reflective electrode formed over the layer of light-emitting material; a low-index layer formed between the first transparent extensive electrode and the thin-film transistor; and a light-scattering layer formed between the low-index layer and the second reflective electrode, or formed as part of the second reflective electrode. |
