| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III-V compound semiconductor optical device, and a method of forming a group III-V compound semiconductor capable of improving photoluminescence characteristics. <P>SOLUTION: In this method, after manufacturing a quantum well structure 25, annealing 27 and the growth of a second conductivity group III-V compound semiconductor region 29 are executed using an organometallic vapor growth furnace 11. Since the annealing of the quantum well structure 25 and thermal cleaning prior to the growth of the second conductivity group III-V compound semiconductor region 29 are executed in the organometallic vapor growth furnace 11, a process is simplified. Also, after executing the annealing 27, a temperature of the organometallic vapor growth furnace 11 is lowered from an annealing temperature T<SB>TH</SB>to a growth temperature T<SB>GR</SB>of the second conductivity group III-V compound semiconductor region 29 in an H<SB>2</SB>atmosphere. Thus, the diffusion of hydrogen to the quantum well structure 25 is suppressed, and the photoluminescence characteristics are improved. <P>COPYRIGHT: (C)2009,JPO&INPIT |
