发明名称 SEMICONDUCTOR ELEMENT, AND METHOD OF MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor element and a manufacturing method thereof. <P>SOLUTION: The semiconductor element comprises a main pattern formed on a substrate, a first dummy pattern made in the direction parallel to the first main pattern on the layer where the first main pattern is formed. Thus more dummy patterns are inserted in consideration of a configuration and orientation of the main pattern on respective metal layers to raise pattern density. Moreover, the dummy patterns are formed in the same direction as the main patterns to raise uniformity of the patterns and to maintain the CD (Critical Diameter) of each pattern constant by securing the uniformity of the patterns as well as to simplify designing and manufacturing process by the regularity of the orientation of the dummy pattern relative to the main pattern. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008283192(A) 申请公布日期 2008.11.20
申请号 JP20080123918 申请日期 2008.05.09
申请人 DONGBU HITEK CO LTD 发明人 LEE SANG HEE;CHO GAB HWAN
分类号 H01L21/3205;H01L21/82;H01L21/822;H01L23/52;H01L27/04 主分类号 H01L21/3205
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