CONDUCTIVE SPACERS EXTENDED FLOATING GATES

摘要

A method for manufacturing on a substrate ( 24 ) a semiconductor device with improved floating-gate to control-gate coupling ratio is described. The method comprises the steps of first forming an isolation zone ( 22 ) in the substrate ( 24 ), thereafter forming the floating gate ( 28 ) on the substrate ( 24 ), thereafter extending the floating gate ( 28 ) using polysilicon spacers ( 40 ), and thereafter forming the control gate ( 44 ) over the floating gate ( 28 ) and the polysilicon spacers ( 40 ). Such a semiconductor device may be used in flash memory cells or EEPROMs.