发明名称 POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR FORMING COPPER WIRING FOR SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a technology to achieve a highly flat surface for a semiconductor integrated circuit that uses copper as wiring metal. <P>SOLUTION: The present invention provides a polishing composition containing a neutralized carboxylic acid, an oxidizer and water, wherein a part of the carboxylic acid is an alicyclic resin acid (A) and the pH value is within a range of from 7.5 to 12. The alicyclic resin acid is preferably at least one type selected from the group consisting of abietic acid, an isomer of abietic acid, pimaric acid, an isomer of pimaric acid and derivatives of these, or a rosin. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008283203(A) 申请公布日期 2008.11.20
申请号 JP20080153645 申请日期 2008.06.12
申请人 ASAHI GLASS CO LTD 发明人 YOSHIDA IORI;KAMIYA HIROYUKI;TAKEMIYA SATOSHI;HAYASHI ATSUSHI;NAKAZAWA NORIHITO
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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