| 摘要 |
Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device may include a substrate having a plurality of isolation areas formed therein, the isolation areas defining an active region, a gate electrode formed on the active region, spacers formed on sides of the gate electrode, a source region formed in the substrate at a side of the spacer formed at a first side of the gate electrode, a drain region formed in the substrate at a side of the spacer formed on a second side of the gate electrode, and lightly doped drain regions formed in the substrate below the spacer.
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