| 摘要 |
An oxygen gas, for instance, is introduced into a film forming chamber, a plurality of monopole antennas arranged above a silicon substrate (101) inside the film forming chamber are supplied with high frequency power, plasma of the introduced oxygen gas is generated, and the surface of an aminosilane molecular layer (102) is supplied with atomic oxygen (123). Such plasma generation is performed for approximately one second. Thus, an adsorption layer (102) adsorbed on the surface of the silicon substrate (101) is oxidized, and a silicon oxide layer (112) of silicon of one atomic layer is formed on the surface of the silicon substrate (101).
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