| 摘要 |
<p>Semiconductors are prepd. by placing layer of silicon oxide on the surface of a semiconductor substrate, placing a metal layer over the oxide layer, and placing a layer of silicon nitride over the metal layer. Pref. the metal layer consists of Al or Au, and a further metal layer of Al is placed over the nitride layer in line with the underlying metal layer. Gives semiconductors with a combination of silicon dioxide and silicon nitride passivation; which are comparable with bipolar integrated circuits. Esp. useful for the prodn. of field effect transistors.</p> |
