发明名称 |
Diffusion system |
摘要 |
Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.
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申请公布号 |
US7452423(B2) |
申请公布日期 |
2008.11.18 |
申请号 |
US20040912059 |
申请日期 |
2004.08.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUN-YOUNG;CHOI BYOUNG-LYONG;LEE EUN-KYUNG |
分类号 |
C23C16/448;H01L21/223;C23C8/06;C23C16/22;C23C16/44;C23C16/452;C23C16/455;C23C16/54;C23F1/00;C30B31/06;C30B31/10;C30B31/16;C30B35/00;H01L21/22 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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