发明名称 Production method of semiconductor chip
摘要 Provided is a method for producing a semiconductor chip, comprising applying a photothermal conversion layer on a light-transmitting support, provided that upon irradiation of radiation energy, the photothermal conversion layer converts the radiation energy into heat and decomposes due to the heat; laminating the semiconductor wafer and the light-transmitting support through a photocurable adhesive by placing the circuit face and the photothermal conversion layer to face each other, thereby forming a laminated body having a non-circuit face on the outside; grinding the non-circuit face of the semiconductor wafer until the semiconductor wafer reaches a desired thickness; dicing the ground semiconductor wafer from the non-circuit face side to cut it into a plurality of semiconductor chips; irradiating radiation energy from the light-transmitting support side to decompose the photothermal conversion layer, thereby causing separation into a semiconductor chips having the adhesive layer and a light-transmitting support; and optionally removing the adhesive layer from the semiconductor chips.
申请公布号 US7452752(B2) 申请公布日期 2008.11.18
申请号 US20040595871 申请日期 2004.10.20
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 NODA KAZUKI;IWASAWA MASARU
分类号 H01L21/304;H01L21/44;H01L21/00;H01L21/301;H01L21/48;H01L21/50;H01L21/68;H01L21/78 主分类号 H01L21/304
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