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发明名称
半导体装置及该半导体装置之制造方法
摘要
本发明之目的为提供一种散热性佳的半导体装置其系使与DRAM 11相接合且用以释出该DRAM之热的散热构件9之至少一部分,自包围该DRAM及散热构件9之周围的保护构件4露出,以保护DRAM 11。
申请公布号
TW200845355
申请公布日期
2008.11.16
申请号
TW097107795
申请日期
2008.03.06
申请人
尼康股份有限公司
发明人
菅谷功
分类号
H01L25/00(2006.01);H01L23/34(2006.01)
主分类号
H01L25/00(2006.01)
代理机构
代理人
陈传岳;郭雨岚
主权项
地址
日本
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