| 摘要 |
A wafer dividing method that includes a modifying layer forming step in which a laser beam with a wavelength that can pass through the wafer is focused on the inside of the wafer from a rear surface side thereof, and applied along the street to form a modifying layer having a thickness corresponding to at least a device-finishing thickness from the front surface of the wafer; a rear surface grinding step in which an area, corresponding to the device area, of the rear surface of the wafer subjected to the modifying layer forming step is ground and formed to have a thickness corresponding to the device-finishing thickness and to have an annular reinforcing section at an area corresponding to the outer circumferential redundant area; a reinforcing section cutting step in which the wafer is cut along the inner circumference of the annular reinforcing section; a wafer support step in which the rear surface of the wafer whose annular reinforcing section is cut is stuck to a dicing tape attached to an annular frame; and a wafer rupture step in which an external force is applied to the wafer stuck to the dicing tape to rupture it along the street formed with the modifying layer.
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