| 摘要 |
<p>The interference effect can be improved by using wing spacer' technology. TAT(Turn Around Time) of the overall process can be reduced. The manufacturing method of the non-volatile memory device is provided. A step is for forming the floating gate(202) with the element isolation film on the substrate(200). A step is for forming the photosensitive pattern(204) whose part is opened on the element isolation film(203A). A step is for forming the groove(205) at the upper part of the device isolation film by using the etching mask as the photosensitive pattern. A step is for removing photosensitive pattern. A step is for etching back to the constant depth the element isolation film top.</p> |
