| 摘要 |
PROBLEM TO BE SOLVED: To increase capacity of a magnetic random access memory, and to provide a method of manufacturing the same. SOLUTION: The magnetic random access memory has a single tunnel junction element MTJs including a first fixed layer Ps1, a first recording layer Fs and a first non-magnetic layer Ts1 provided between the first fixed layer and the first recording layer, and having magnetization directions parallel or non-parallel in response to a direction of current of the first fixed layer and the first recording layer, second and third fixed layers Pw1 and Pw2, a second recording layer Fw, a second non-magnetic layer Tw1 provided between the second fixed layer and the second recording layer, and a third non-magnetic layer Tw2 provided between the third fixed layer and the second recording layer. A memory cell MC is structured, which has a double tunnel junction element MTJw having the magnetization directions of the second fixed layer and the second recording layer parallel or non-parallel in response to the direction of the current flowing between the second fixed layer and the second recording layer, and the single tunnel junction element and the double tunnel junction element connected in series with each other. COPYRIGHT: (C)2009,JPO&INPIT
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