SILICON CARBIDE ZENER DIODE

摘要

Provided is a mesa-type silicon carbide zener diode which has a large current capacity without concentrating electric field to a mesa end section on a pn junction interface. The silicon carbide zener diode is a bipolar semiconductor device having a mesa structure, and in the bipolar semiconductor device, a first conductivity type silicon carbide conductive layer is formed on a first conductivity type silicon carbide single crystal substrate, and a second conductivity type silicon carbide conductive layer is formed on the first conductivity type silicon carbide conductive layer. When a reverse direction voltage is applied, a depletion layer formed on the junction interface of the first conductivity type silicon carbide conductive layer and the second conductivity type silicon carbide conductive layer does not reach a mesa corner section formed on the first conductivity type silicon carbide conductive layer.