发明名称 |
MOS devices having elevated source/drain regions |
摘要 |
A semiconductor structure includes a semiconductor substrate; a gate dielectric over the semiconductor substrate; a gate electrode over the gate dielectric; a deep source/drain region adjacent the gate electrode; a silicide region over the deep source/drain region; and an elevated metallized source/drain region between the silicide region and the gate electrode. The elevated metallized source/drain region adjoins the silicide region.
|
申请公布号 |
US2008277735(A1) |
申请公布日期 |
2008.11.13 |
申请号 |
US20070800615 |
申请日期 |
2007.05.07 |
申请人 |
KO CHIH-HSIN;CHEN HUNG-WEI;KE CHUNG-HU;KUAN TA-MING;LEE WEN-CHIN |
发明人 |
KO CHIH-HSIN;CHEN HUNG-WEI;KE CHUNG-HU;KUAN TA-MING;LEE WEN-CHIN |
分类号 |
H01L29/417;H01L27/092;H01L29/78 |
主分类号 |
H01L29/417 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|