发明名称 |
METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING |
摘要 |
A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness. |
申请公布号 |
WO2008137738(A2) |
申请公布日期 |
2008.11.13 |
申请号 |
WO2008US62495 |
申请日期 |
2008.05.02 |
申请人 |
INNOVALIGHT, INC.;LEMMI, FRANCESCO;MEISEL, ANDREAS;ANTONIADIS, HOMER |
发明人 |
LEMMI, FRANCESCO;MEISEL, ANDREAS;ANTONIADIS, HOMER |
分类号 |
H01L31/0368;H01L21/20;H01L31/0392;H01L31/068;H01L31/18 |
主分类号 |
H01L31/0368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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