| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has high reliability and can be adapted to high-speed transmission by preventing an inter-bump short-circuit or the fracture of a connected portion caused by high strain generated upon the heating or application of a load during connection, or reducing contact resistance, in a structure for connecting a semiconductor element having a fine pitch electrode at a 50μm pitch or smaller and a pad or wiring on a substrate. SOLUTION: The substrate and the semiconductor element are connected by a bump having a longitudinal elastic modulus (Young's modulus) of 65 GPa or larger and 600 GPa or smaller and a buffer layer including one of tin, aluminum, indium, or lead as a main ingredient. Further, protrusions are formed at least at one of opposing surfaces of the bump and the pad or the wiring on the substrate, and the surfaces are connected by ultrasonic waves. Thereby, low-temperature connection is made possible. COPYRIGHT: (C)2009,JPO&INPIT
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