Systems and Methods for Fabricating Vertical Bipolar Devices

摘要

Systems and methods for fabricating bipolar and/or biCMOS devices are described. A combination of bipolar fabrication steps and CMOS, and in particular, SOI fabrication steps may be used. In one embodiment, a collector region and/or a base region of a bipolar device may be formed using a bipolar mask, and an emitter region may be defined by a CMOS mask.