| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric converter that suppresses the generation of a leakage current and reduces the contact resistance at the interface between a thin-film photoelectric converter and a charge transport material and between the charge transport material and an electrode. <P>SOLUTION: The photoelectric converter comprises: a translucent substrate; a translucent conductive layer formed on one main surface of the translucent substrate; a translucent thin-film photoelectric conversion layer that is formed on the translucent conductive layer and has a non-single crystal semiconductor layer for photoelectric conversion; the thin-film photoelectric converter that is formed on the thin-film photoelectric conversion layer and has a first catalyst layer for promoting charge movement; a substrate; a counter electrode side structure that has a conductive layer formed on one main surface of the substrate and a second catalyst layer formed on the conductive layer to promote charge movement, where the first and second catalyst layers oppose each other; and a charge transport layer provided between the first and second catalyst layers in the thin-film photoelectric converter and the counter electrode side structure. <P>COPYRIGHT: (C)2009,JPO&INPIT |
