| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a resistance value is not changed even if pressure is applied to the device by bonding. <P>SOLUTION: A first resistance element 20 formed by an n-type semiconductor and a second resistance element 22 formed by a p-type semiconductor are connected in series. A bump 18 is provided on an electrode 14 connected electrically to an integrated circuit 12. The first resistance element 20 includes a first overlapping portion 24 overlapping with the bump 18 and having a first resistance value. The second resistance element 22 includes a second overlapping portion 26 overlapping with the bump 18 and having a second resistance value. The first overlapping portion 24 has a property in which the first resistance value is lowered in proportion to a load applied thereto. The second overlapping portion 26 has a property in which the second resistance value is increased in proportion to a load applied thereto. The lowering rate of the first resistance value is x times the increase rate of the second resistance value. The first resistance value is 1/x times the second resistance value. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
