| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a SOI substrate having SOI layer, which can withstand practical use if a substrate with low heat resistant temperature, such as a glass substrate, is used, and to provide a semiconductor device that uses the SOI substrate. <P>SOLUTION: When a monocrystalline semiconductor layer is jointed to a substrate having insulating surface or to an insulating substrate, silicon oxide film made by film formation, by using organic silane as the raw material is used as one or both faces on which the jointing is formed. In this constitution, an SOI layer jointed firmly can be obtained, by using a substrate with heat-resistant temperature of 700°C or smaller, such as glass substrate. Namely, a monocrystalline semiconductor layer can be formed on a substrate with a large area exceeding 1 meter of one side. <P>COPYRIGHT: (C)2009,JPO&INPIT |
