发明名称 |
METHODS OF MANUFACTURING MOS TRANSISTORS WITH STRAINED CHANNEL REGIONS |
摘要 |
In some methods of manufacturing transistors, a gate electrode and a gate insulation layer pattern are stacked on a substrate. Impurity regions are formed at portions of the substrate that are adjacent to the gate electrode by implanting Group III impurities into the portions of the substrate. A diffusion preventing layer is formed on the substrate and covering the gate electrode. A nitride layer is formed on the diffusion preventing layer. The substrate is thermally treated to form a strained silicon region in the substrate between the impurity regions and to activate the impurities in the impurity regions. A high performance PMOS transistor and/or CMOS transistor may thereby be manufactured on the substrate.
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申请公布号 |
US2008280391(A1) |
申请公布日期 |
2008.11.13 |
申请号 |
US20080112562 |
申请日期 |
2008.04.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN DONG-SUK;LEE JOO-WON;KIM TAE-GYUN |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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