发明名称 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition which has hydrophobicity suitable for the formation of a fine resist pattern and ensures excellent solubility of its exposed part in an alkali developer in development, and a resist pattern forming method. <P>SOLUTION: The positive resist composition comprises a resin component (A) which comprises a fluorine-containing high molecular compound (A0) having a constitutional unit represented by general formula (a0-1), and of which the solubility in an alkali developer increases by the action of an acid, and an acid generator component (B) which generates an acid upon exposure. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008275949(A) 申请公布日期 2008.11.13
申请号 JP20070120321 申请日期 2007.04.27
申请人 TOKYO OHKA KOGYO CO LTD 发明人 IRIE MAKIKO
分类号 G03F7/039;C08F20/28;H01L21/027 主分类号 G03F7/039
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