INVERTED JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF FORMING THEREOF

摘要

A junction field effect transistor includes a substrate (12) and a well region (20) on the substrate (12). A channel region (22) lies in the well region (20). A source region (15) lies in the channel region (22). A drain region (13) lies in the channel region (22) and apart from the source region (15). A gate region (11) is isolated from the source, drain, and channel regions. The gate region (11) is in contact with a portion of the well region (20).