发明名称 CHEMICAL MECHANICAL POLISHING COMPOSITION AND PROCESS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a situation that: a composition for chemical mechanical polishing includes a slurry; a sufficient amount of a selectively oxidizing and reducing compound is provided to produce differential removal of a metal and a dielectric material; and a pH-adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of a metal and a dielectric material. <P>SOLUTION: A method for chemical mechanical polishing includes applying of a slurry to a surface of a metal and a dielectric material, to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied, to produce the differential removal of the metal and the dielectric material. The slurry and the pH of the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008277848(A) 申请公布日期 2008.11.13
申请号 JP20080154196 申请日期 2008.06.12
申请人 EKC TECHNOL INC 发明人 SMALL ROBERT J;MCGHEE LAURENCE;MALONEY DAVID JOHN;PETERSON MARIA LOUISE
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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