发明名称 |
HOCHADAPTIVER HETEROGENER LEISTUNGSVERSTÄRKER MITTELS FLIP-CHIP UND MIKRO-ELEKTRO-MECHANISCHE (MEM) SYSTEME AUF VERLUSTARMEN SUBSTRATEN |
摘要 |
A first MEM is mounted on a substrate having a first contact and a second contact is mounted on a substrate. A PA power cell is thermally connected to the substrate using a thermal bump. The power cell is electrically insulated from the substrate. The power cell has a first power cell bump and a second power cell bump as pathways for I/O functions. A first insulator is mounted on the substrate supporting a second MEM above the substrate. The second MEM has a first connection and a second connection The first connection and the second connection are located on a bottom surface of the second MEM. A first conductive via vertically traverses the first insulator and is connected to the first connection from the second MEM. This first conductive via is further connected to a first conductor. The first conductor is insulated from substrate by a first insulating layer. The first conductor is further connected to the first power cell bump. A second conductor is insulated from the substrate by a second insulating layer. The second conductor is connected to a second conductive via. The second conductive via traverses vertically a second insulator. The second conductive via is connected to a first metal member. The first metal member is formed over the upper surface of the second insulator and connected to a first input to the first MEM switch. A second metal member is connected to the second contact of the first MEM switch. The second metal member is formed over the upper surface of a third insulator. The third insulator is positioned over the substrate. |
申请公布号 |
DE60317923(T2) |
申请公布日期 |
2008.11.13 |
申请号 |
DE2003617923T |
申请日期 |
2003.11.13 |
申请人 |
RAYTHEON COMPANY |
发明人 |
TONOMURA, SAMUEL D.;ALLISON, ROBERT C.;PIERCE, BRIAN M. |
分类号 |
H01L23/66;B81B7/00;H05K1/18 |
主分类号 |
H01L23/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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