| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a photoresist pattern excellent in dimensional accuracy and productivity. SOLUTION: The method for forming a photoresist pattern includes steps of: applying a photoresist on a film to be etched formed on a substrate; prebaking the substrate coated with the photoresist in a prebaking furnace; cooling the substrate taken out from the prebaking furnace in a temperature controlled unit to a predetermined temperature while measuring the substrate temperature with a temperature sensor; exposing the photoresist on the substrate taken out from the temperature controlled unit in an exposure machine; and developing the photoresist on the substrate taken out from the exposure machine. COPYRIGHT: (C)2009,JPO&INPIT |
