| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging device which can attain high sensitivity by accumulating, at each specified time, the charge generated by photoirradiation. SOLUTION: An imaging device 1 has, on a semiconductor, an imaging region E1 where a plurality of imaging elements Px each of which includes a photoelectric conversion part D1 for generating charges through photoirradiation, and a storage region E2, where the charges generated in the imaging region E1 are transferred at a specified time and a plurality of storage elements Py are disposed to store the charges of the respective imaging elements Px. The storage element Py has a saturation charge amount larger than that of the imaging element Px and includes an addition part F1 for adding charges generated in each imaging element Px with the charge fed from the imaging region E1. COPYRIGHT: (C)2009,JPO&INPIT
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