| 摘要 |
A method of producing thin, monocrystalline layers of semiconductor material, upon a monocrystalline, preferably wafer-shaped, substrate body of another chemical composition, but having the same or a similar lattice structure, by an epitactic growth process. The substrate body is immersed into a melt comprising the appropriate semiconductor material. A temperature balance between the substrate body and the melt, is established. Thereafter the semiconductor material epitactically grown on the surface of the substrate body, by slowly pulling the substrate body out from the melt.
|
