| 摘要 |
A pressure sensor manufacturing method and a structure thereof are provided to integrate a pressure sensor and a signal processing circuit on one chip with a simple process, make thin and uniform diaphragm and reduce the chip size of the sensor. A pressure sensor manufacturing method comprises the following steps. An SOI semiconductor substrate in which a first silicon layer, a first insulation layer(114) and a second silicon layer(112) are successively laminated is prepared. A piezo resistance(120) is formed on a part of the second silicon layer by diffusion or ion injection process. A sensor circuit part including an electrode(130) connected to the piezo resistance is formed. A part of the lower surface of the first silicon layer which is the lower surface of the semiconductor substrate is dry-etched and a diaphragm is formed. A diaphragm(160) is formed by a recess exposing the first insulation layer through the first silicon layer.
|
