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发明名称
SEMICONDUCTOR PROCESS INTEGRATING SOURCE/DRAIN STRESSORS AND INTERLEVEL DIELECTRIC LAYER STRESSORS
摘要
申请公布号
EP1989729(A2)
申请公布日期
2008.11.12
申请号
EP20070756764
申请日期
2007.02.08
申请人
FREESCALE SEMICONDUCTOR, INC.
发明人
ZHANG, DA;ADAMS, VANCE H.;NGUYEN, BICH-YEN;GRUDOWSKI, PAUL A.
分类号
H01L21/336;H01L29/165
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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