| 摘要 |
<p>The device character can be improved by increasing the mobility of the carrier and operation current of device in channel region by using the epitaxial silicon germanium layer. A step is for forming the gate pattern on the substrate(21). A step is for forming the recessed surface(27A, 27B) by etching the both sides substrate of the gate pattern. A step is for progressing cleaning treatment on the recessed surface. A step is for forming seed layer(epitaxial silicon layer) on the recessed surface. A step is for forming the epitaxial thin film(epitaxial silicon germanium layer)(29) on the seed layer. The cleaning treatment goes side by side with the dry cleaning and wet cleaning. The solution including the hydrofluoric acid(HF) is used in he wet cleaning. The mixing gas of the oxygen gas and fluorocarbon gas is used in the dry cleaning.</p> |
