发明名称 APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 The temperature of chuck is increased to the temperature of the wafer cleaning solution before the etching process or the cleaning process is progressed. Therefore, the particle generated from chuck in the process bath can be remarkably reduced without coating the chuck. The apparatus for fabricating semiconductor devices comprises as follows. The first process bath(110) is for supplying the first processing liquid processing wafer. A chuck(130) is for mounting a wafer. A robot arm(120) is connected to the chuck and move the chuck. The temperature controller(144) is for controlling the temperature of chuck. The second process bath is for supplying the second processing liquid. The second process bath increases the temperature of chuck. The second processing liquid is the deionized water(DI). The gas blowing nozzle is installed on the top of the second process bath. The gas supplying unit is for supplying the gas to the gas blowing nozzle. The gas is to heat up and make dry the chuck. The gas includes N2 gas.
申请公布号 KR20080099035(A) 申请公布日期 2008.11.12
申请号 KR20070044626 申请日期 2007.05.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN, TAE SUNG;YOON, BYOUNG MOON;RYU, CHANG GIL;JUN, YONG MYUNG;LEE, SANG HOON
分类号 H01L21/02;H01L21/302 主分类号 H01L21/02
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