Method to identify or screen VMIN drift on memory cells during burn-in or operation

摘要

A method of manufacturing a semiconductor device includes providing an electrical connection to a well of a MOS transistor of a static random access memory (SRAM) cell. A predetermined voltage is applied to the well using the connection to cause a threshold voltage (V_t) of said transistor to change. The change is employed to identify a reliability characteristic of the semiconductor device. An SRAM parameter is altered to modify the reliability characteristic.