A MASKROM DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE MASKROM DEVICE AND METHODS OF MANUFACTURING THE SAME

摘要

The transistor structure of on cell can maintain enough high break down voltage and the low leakage current In the mask ROM device. Data can be steadily outputted because a channel is not formed when the transistor of off-cell is the active state. A mask rom device comprises an on cell and an off cell. The on cell comprises an on cell gate structure having an on cell gate electrode, an on cell gate spacer, an on cell gate insulating layer formed on the substrate, and an on cell junction structure(240a,240b) including a first on cell ion implantation region of the first polarity formed in the substrate, a second on cell ion implantation region, a third on cell ion implantation region of the second polarity, a fourth on cell ion implantation region. The off cell comprises a gate structure including an off-cell gate electrode and an off cell gate spacer and an off cell junction structure including the first on cell ion implantation region and the first polarity, the second off cell ion implantation region and the third on cell ion implantation region and the second polarity.