| 摘要 |
A data output circuit of the semiconductor memory device is provided to prevent the malfunction while performing the stable operation. A data output clock generation unit(10) generates rising data output clock(rclk do) and rising latch signal(rlat) in response to polling latch signal(flat) and generates polling data output clock(fclk do) and polling latch signal in response to the rising latch signal from the falling clock(fclk). A data output pre-driver(20) drives the rising data(rdata) in response to the rising data output clock and drives the polling data(fdata) in response to the polling data output clock.
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