发明名称 Lithography pattern shrink process and articles
摘要 Novel processes of applying a thin, uniform, conformal organic polymeric film by a wide variety of deposition processes into lithography pattern substrates are provided. The inventive processes result in shrinking of the gaps in the lithography pattern equally, thus producing a smaller dimension. The amount of pattern shrinkage is selectively controlled by controlling the deposition rate to provide the desired final structure dimension. A wide variety of organic films is used as materials for these films. The inventive methods are applicable to any patterning technique used in lithography to provide a reduction in pattern sizes. Examples of the applicable device levels include the production of gate layers, ion implantation of active device layers and substantive metal layers, dielectric patterning, interconnect processes produced by damascene, dual damascene, backend packaging layers, and devices requiring multiple layers deposited by electrodeposition, CVD or sputtering. The inventive methods are useful for providing highly conformal coatings on large surface substrates having super submicron (i.e., 0.15 mum or smaller) features. The process is environmentally friendly and relatively low cost compared to other options.
申请公布号 US7449230(B2) 申请公布日期 2008.11.11
申请号 US20050063411 申请日期 2005.02.23
申请人 BREWER SCIENCE INC. 发明人 SABNIS RAM W.;LAMB, III JAMES E.
分类号 B32B3/30;H01L21/28;B32B3/10;G03C5/00;G03F7/00;G03F7/16;G03F7/40;H01L21/00;H01L21/027;H01L21/312;H01L21/768 主分类号 B32B3/30
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