发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>When the device forming layer is peeled off, including the semiconductor device from the substrate in the manufacturing the semiconductor device, discharge by the static electricity generated by exfoliation is suppressed. The peeling layer(12) and the device forming layer(11) are formed on the substrate(10). The peelable support base(13) is fixed on the upper side of the device forming layer. The support base is interposed. The device forming layer is transformed. Exfoliation is generated in the interface of the peeling layer and device forming layer. An exfoliation process is performed while wetting the device forming layer and the peeling layer with a liquid like pure water. Electric charges on the surface of the peeling layer and device forming layer generated by the liquid are diffused. Discharge by the release electrification can be removed.</p> |
申请公布号 |
KR20080098345(A) |
申请公布日期 |
2008.11.07 |
申请号 |
KR20080102327 |
申请日期 |
2008.10.20 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
EGUCHI SHINGO;MONMA YOHEI;TANI ATSUHIRO;HOSAKA YASUHARU;HASHIMOTO KENICHI;HIROSUE MISAKO |
分类号 |
H01L27/12;G02F1/13;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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