| 摘要 |
Method to produce a structure consisting of depositing a material by columnar epitaxy on a crystalline face of a substrate ( 2 ), of continuing so that the columns ( 4 ) give a continuous layer ( 5 ). The surface is provided with a period array of bumps ( 3 ) on a nanometric scale, each bump ( 3 ) having a support zone ( 35 ) and being obtained from an array of crystalline defects and/or strain fields created within a crystalline region ( 16 ) located in the vicinity of a bonding interface ( 15 ) between two crystalline elements ( 11, 12 ) whose crystalline lattices have a twist and/or tilt angle and/or have interfacial lattice mismatch, able to condition the period ( 38 ) of the array of bumps ( 3 ). The period ( 38 ) of the array, the height ( 36 ) of the bumps and the size of their support zone ( 35 ) being adjusted so that the continuous layer ( 40 ) has a critical thickness that is greater than that obtained using epitaxy without the bumps.
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